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Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
Pala M
•
Le Royer C
•
Le Carval G
•
Clavelier L
2006
journal article
Periodico
JOURNAL OF COMPUTATIONAL ELECTRONICS
DOI
10.1007/s10825-006-8851-0
WOS
WOS:000208997700031
Archivio
https://hdl.handle.net/11390/1266707
http://link.springer.com/10.1007/s10825-006-8851-0
https://ricerca.unityfvg.it/handle/11390/1266707
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