Important experimental artifacts due to the gate leakage are identified during Low Frequency Charge Pumping (LFCP) experiments performed on SNOS cells to probe the SiN traps. Gate leakage is shown to impair the LFCP data detected at the S/D and bulk terminals and detailed experimental analysis is carried out on SNOS and MOSFETs to investigate how the effect of the gate leakage can be compensated for to recover reliable LFCP measurements.
