We study the impact of quantum mechanical effects
on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET)
considering different geometries. Through quantum simulations
based on the effective mass approximation (EMA), it is found
that the fin EHBTFET is affected by the corner effects at the
substrate-fin interface, due to reduced electrostatic control that
causes a dramatic reduction of the ON current. Three different
solutions; corner smoothing, corner doping and trapezoidal fins;
are proposed and their efficiency are assessed. The corner
smoothing turns out to be ineffective whereas trapezoidal fins
entail a device performance trade-off. Utilizing corner doping is
the most viable choice to achieve a large ON current.
