We present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green's function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.
