We study the influence of remote Coulomb scattering (RCS) due to trapped charges at the silicon oxide/high-kappa. material interface on the electrical performances of silicon nanowire (Si-NW) FETs. We address a full quantum analysis based on the 3-D self-consistent solution of the Poisson-Schrodinger equation within the coupled mode-space non-equilibrium Green's function (NEGF) formalism. We find that the RCS strongly affects the electrical performances of Si-NWs by increasing both the inverse subthreshold voltage slope and the I(off) current. RCS-limited mobility, which is mainly determined by screening effects, is found to have quasi-linear dependence on the 1-D channel electron density, and its dependence on fixed charge density and interface layer thickness is discussed.
