Electron- and hole-mobility enhancements in biaxially
strained metal–oxide–semiconductor transistors are still a
matter for active investigation, and this brief presents a critical
examination of a recently proposed interpretation of the experimental
data, according to which the strain significantly modifies
not only the root-mean-square value but also the correlation
length of the surface-roughness spectrum.We present a systematic
comparison between comprehensive numerical simulations and
experiments, which supports such an interpretation.
