Logo del repository
  1. Home
 
Opzioni

Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs

Zhang, C. -.M.
•
Jazaeri, F.
•
Pezzotta, A.
altro
Enz, C.
2017
  • conference object

Periodico
PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE
DOI
10.1109/ESSDERC.2017.8066584
WOS
WOS:000426914100008
Archivio
http://hdl.handle.net/11390/1127425
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85033472598
http://ieeexplore.ieee.org/xpl/conferences.jsp
Diritti
closed access
Soggetti
  • 28 nm bulk MOSFET

  • Analog parameter

  • EKV

  • intrinsic gain

  • inversion coefficient...

  • TID

  • transconductance effi...

  • Electrical and Electr...

  • Safety, Risk, Reliabi...

Scopus© citazioni
10
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Web of Science© citazioni
14
Data di acquisizione
Mar 19, 2024
Visualizzazioni
2
Data di acquisizione
Apr 19, 2024
Vedi dettagli
google-scholar
Get Involved!
  • Source Code
  • Documentation
  • Slack Channel
Make it your own

DSpace-CRIS can be extensively configured to meet your needs. Decide which information need to be collected and available with fine-grained security. Start updating the theme to match your nstitution's web identity.

Need professional help?

The original creators of DSpace-CRIS at 4Science can take your project to the next level, get in touch!

Realizzato con Software DSpace-CRIS - Estensione mantenuta e ottimizzata da 4Science

  • Impostazioni dei cookie
  • Informativa sulla privacy
  • Accordo con l'utente finale
  • Invia il tuo Feedback