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Temperature dependence of the photoemission spectra of Si(110) between 300 and 1630 K

L. Grill
•
A. Santoni
•
S. Prato
altro
MODESTI, SILVIO
2001
  • journal article

Periodico
SURFACE SCIENCE
Abstract
The valence band (VB) and the 2p core level of the Si(1 1 0) surface have been investigated as a function of the temperature starting from the “16×2” reconstruction at room temperature up to 1630 K which is close to the Si melting point (1683 K). The “16×2”→(1×1) phase transition at about 1000 K causes a sudden shift of the Si 2p core level spectra. It is associated to a change of the surface band bending and to a change of the surface Si 2p components. The transition is also observed in the VB spectra as a change of their shape and of the emission intensity at the Fermi level. Other changes in the surface structure are detected at about 1320 K. No evidence for a sudden surface melting has been found.
DOI
10.1016/S0039-6028(00)00983-3
WOS
WOS:000167355800016
Archivio
http://hdl.handle.net/11368/2560260
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0034831809
http://dx.doi.org/10.1016/S0039-6028(00)00983-3
Diritti
metadata only access
Soggetti
  • surface phase transit...

Scopus© citazioni
7
Data di acquisizione
Jun 7, 2022
Vedi dettagli
Web of Science© citazioni
6
Data di acquisizione
Mar 25, 2024
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