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Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence

SALVIATI G
•
LAZZARINI L
•
ARMANI N
altro
FRANCIOSI, ALFONSO
2008
  • conference object

Abstract
Hydrogen is known to passivate nitrogen in dilute nitrides, such as Ga(AsN) and Ga(PN). By focusing an electron beam on the surface of hydrogenated GaAs1−xNx/GaAs (GaP1−yNy/GaP) we remove hydrogen atoms from their passivation sites, thus leading to a controlled decrease of the crystal band gap in the spatial region where the e-beam is steered. The area designated by the electron beam acts in all respects as a potential well for carriers. Cycling the samples several times between T=5 K and room temperature, the same CL images and spectra were recorded thus demonstrating the thermal stability of the H displacement process. The 100% pre hydrogenation conditions are achieved after 30–40 sec of irradiation at T=5 K.
DOI
10.1007/978-1-4020-8615-1
Archivio
http://hdl.handle.net/11368/2953
Diritti
metadata only access
Soggetti
  • Nitride

  • cathodoluminescence

Visualizzazioni
4
Data di acquisizione
Apr 19, 2024
Vedi dettagli
google-scholar
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