This paper reports a simulation study investigating
the drive current in the prototypical SiGe n-type FinFET depicted
in Fig.1 and for different values of the Ge content x in the
Si(1−x)Gex active layer. To this purpose we performed strain simulations,
band-structure calculations and Multi-Subband Monte
Carlo transport simulations accounting for the effects of the Ge
content on both the band-structure and scattering rates in the
transistor channel. Our results suggest that the largest on-current
may be obtained with a simple Si active layer.
